This colorized scanning electron micrograph shows pollens ? bermuda grass in green , maple in red , and rag weed in yellow ? at roughly 3 , 000 times their itchy , sneezy life size 這是彩色掃描電子顯微圖,上面顯示的是各種花粉,綠色的是百慕大草,紅色的是楓木,黃色的是雜草。大概放大到了它們自身的3000倍,跟人的噴嚏一樣大!
Based on analyzing data from thin section , scanning electron micrograph and mercury injection , using nuclear magnetic resonance ( nmr ) , rock - electr experiment and numerical simulation techniquess , etc . to analyze main origin of complex oil and water zones 摘要在對薄片、掃描電鏡、壓汞資料分析基礎(chǔ)上,采用核磁共振、巖電實驗和數(shù)值模擬等手段,分析研究了復(fù)雜油水層的主要成因。
By analyzing the microstructure of as - cast alloys with different surplus of samarium added , the optimum surplus of samarium is decided . by comparing the microstructure of the alloys annealed for different time , the ideal and economical annealing time is confirmed . the microstructure and phase composition of alloys during the whole preparation of sm2fe17nx are analyzed using the scanning electron micrograph with energy - dispersive x - ray analysis and x - ray diffraction patterns 本論文首先就熔煉工藝參數(shù)對鑄態(tài)組織微結(jié)構(gòu)的影響進行了探討,并制定出一套較為合適的熔煉工藝;通過對不同釤加入量的鑄態(tài)組織微觀結(jié)構(gòu)的觀察分析,確定了原料配置過程中釤的最佳補償量;通過對采用不同退火時間的合金組織進行比較,確定了理想、經(jīng)濟的退火時間;同時還利用掃描電子顯微圖像和x射線衍射圖譜,比較了整個制備過程中,試樣微結(jié)構(gòu)和相組成的變化情況。
The chemical composition and microstructures of the insulating thin films prepared by different methods were analyzed by x - ray diffraction ( xrd ) and scanning electron micrograph ( sem ) ; other properties such as electric resistance , the breakdown field strength and dielectric properties were evaluated using high resistance meter , voltage resistance meter and precision impedance analyzer respectively 采用x射線衍射儀( xrd )對表面絕緣薄膜的物相組成進行了分析,掃描電子顯微鏡( sem )對表面絕緣薄膜的微觀結(jié)構(gòu)進行了研究,并用絕緣電阻測試儀、耐壓測試儀和精密阻抗分析儀分別對絕緣膜進行絕緣電阻率、擊穿場強和介電性能的測試。
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process , chemical etching , scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ) . a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed 本文通過化學(xué)腐蝕、光學(xué)顯微鏡、掃描電鏡( sem ) 、透射電境( tem )等分析技術(shù),對重?fù)缴楣鑶尉г趩尾酵嘶鸸に嚭蛢?nèi)吸雜退火工藝中氧沉淀及誘生缺陷的形態(tài),形核與熱處理溫度、時間的關(guān)系等進行了研究。
The fabrication parameters were preliminarily optimized . the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ) . the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims ) 闡述了摻硼金剛石膜的制備工藝,研究了摻硼金剛石膜成核和生長的影響因素,初步優(yōu)化了沉積摻硼金剛石膜工藝參數(shù),同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質(zhì)譜分析和電阻率測試。